Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm<sup>2</sup>) Stress-Reference-Cited by-同舟云学术

Parameter Shift of Quasi-Vertical GaN-on-Si Schottky Barrier Diodes Under On-State Forward-Current (2–4 kA/cm²) Stress

Published:2023-03 Issue:3 Volume:70 Page:959-962
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Shenglei¹^ORCID,Zhang Jincheng¹^ORCID,Feng Qi²,Du Lin²,Zhang Weiwei²,Ji Siwei²,Song Xiufeng¹^ORCID,Wu Feng¹,Zhang Weihang¹^ORCID,Bian Zhaoke³^ORCID,Liu Zhihong¹,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Shanghai Precision Metrology and Testing Research Institute, Shanghai, China

3. 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang, China

Funder

National Science Fund for Distinguished Young Scholars

National Natural Science Foundation of China

Fundamental Research Plan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10028658.pdf?arnumber=10028658

Reference22 articles.

1. High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

2. Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

3. Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

4. GaN-on-Si Vertical Schottky and p-n Diodes

5. Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

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1. Reliability of Quasi-vertical GaN on Silicon Schottky Barrier Diodes With SiO₂ Passivation Layer Under On-State Stress Bias;IEEE Transactions on Electron Devices;2024-09

2. 0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation;IEEE Electron Device Letters;2024-06

3. Research Progress in Breakdown Enhancement for GaN-Based High-Electron-Mobility Transistors;Electronics;2023-10-27

4. Instability of On-Resistance in Vertical GaN PIN Diodes Under High-Temperature and Voltage Stress;IEEE Transactions on Electron Devices;2023