Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes-Reference-Cited by-同舟云学术

Reduction of on-resistance and current crowding in quasi-vertical GaN power diodes

Published:2017-10-16 Issue:16 Volume:111 Page:163506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Yuhao¹^ORCID,Sun Min¹,Piedra Daniel¹,Hennig Jonas²^ORCID,Dadgar Armin²^ORCID,Palacios Tomás¹

Affiliation:

1. Microsystems Technology Laboratories, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2, 39106 Magdeburg, Germany

Funder

DOE | Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4989599

Reference26 articles.

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3. High-Performance 500 V Quasi- and Fully-Vertical GaN-on-Si pn Diodes

4. Y. Zhang , M. Sun , Z. Liu , D. Piedra , M. Pan , X. Gao , Y. Lin , A. Zubair , L. Yu , and T. Palacios , in IEEE International Electron Devices Meeting (IEDM) (2016), pp. 10.2.1–10.2.4.

5. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

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