Transistor Reliability Characterization for Advanced DRAM with HK+MG & EUV process technology
Author:
Affiliation:
1. Memory Division, Samsung Electronics,Hwasung,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764439.pdf?arnumber=9764439
Reference15 articles.
1. Considering physical mechanisms and geometry dependencies in 14nm FinFET circuit aging and product validations
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3. A Systematic Study of Gate Dielectric TDDB in FinFET Technology;kim;2019 IEEE International Reliability Physics (IRPS),2019
4. Hot carrier reliability characterization in consideration of self-heating in FinFET technology
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