Reliability on Evolutionary FinFET CMOS Technology and Beyond-Reference-Cited by-同舟云学术

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Reliability on Evolutionary FinFET CMOS Technology and Beyond

Published:2020-12-12 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Electron Devices Meeting (IEDM)
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Author:

Choi Kihyun,Sagong Hyun Chul,Jin Minjung,Hai Jiang,Lee Miji,Jeong Taeyoung,Yeo Myung Soo,Shim Hyewon,Ahn Da,Kim Wooyeon,Kim Yongjeung,Park JuneKyun,Rhee Hwasung,Lee Euncheol

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9371868/9371888/09371930.pdf?arnumber=9371930

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Review of Techniques for Ageing Detection and Monitoring on Embedded Systems;ACM Computing Surveys;2024-09-06

2. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

3. Integrated 2D multi-fin field-effect transistors;Nature Communications;2024-04-29

4. Investigation of Positive Bias Temperature Instability in advanced FinFET nodes;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

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