Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs-Reference-Cited by-同舟云学术

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Reliability Characterization of HBM featuring $\text{HK}+\text{MG}$ Logic Chip with Multi-stacked DRAMs

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Ha Sungmock¹,Lee S.¹,Bae GH.¹,Lee DS.¹,Kim S.H.¹,Woo BW.¹,Lee N-H¹,Lee YS.¹,Pae S.¹

Affiliation:

1. Memory Division, Samsung Electronics,Hwasung,Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118277.pdf?arnumber=10118277

Reference10 articles.

1. Thermal Modeling and Analysis of High Bandwidth Memory in 2.5D Si-interposer Systems

2. Morphological evolution induced by volume shrinkage in micro joints

3. Reliability Characterization for Advanced DRAM using HK/MG + EUV Process Technology

4. High bandwidth memory (hbm) dram.;JESD235D JESD238A,0

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermo-Mechanical Reliability Characteristics of 8H HBM3;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking Conditions;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

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