Electron-assisted switching in FeFETs: Memory window dynamics – retention – trapping mechanisms and correlation
Author:
Affiliation:
1. Applied Materials Inc.,Santa Clara,CA,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764520.pdf?arnumber=9764520
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2. Re-Examination of Vth Window and Reliability in HfO2 FeFET Based on the Direct Extraction of Spontaneous Polarization and Trap Charge during Memory Operation
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