A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure-Reference-Cited by-同舟云学术

A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure

Published:2023-09 Issue:9 Volume:70 Page:4641-4646
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Xiaoqing¹^ORCID,Chai Junshuai¹^ORCID,Tian Fengbin¹^ORCID,Zhao Shujing²^ORCID,Duan Jiahui¹^ORCID,Xiang Jinjuan³,Han Kai⁴^ORCID,Xu Hao¹^ORCID,Wang Xiaolei¹^ORCID,Wang Wenwu⁵

Affiliation:

1. Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. School of Microelectronics, Faculty of Electronics and Information Engineering, Xi’an Jiaotong University, Xi’an, China

3. Beijing Superstring Academy of Memory Technology, Beijing, China

4. School of Physics and Electronic Information, Weifang University, Weifang, China

5. Bureau of Major Research and Development Program Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10227840/10197313.pdf?arnumber=10197313

Reference26 articles.

1. Theory of Quantum Transport at Nanoscale

2. Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling

3. Experimental and theoretical investigation on polarization reversal in unfatigued lead-zirconate-titanate ceramic

4. Ultrafast non-volatile flash memory based on van der Waals heterostructures

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