Expanding the Pareto Front of Ferroelectric Field-Effect Transistors With a Dual-<i>k</i> Spacer-Reference-Cited by-同舟云学术

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Expanding the Pareto Front of Ferroelectric Field-Effect Transistors With a Dual-k Spacer

Published:2024 Issue: Volume: Page:1-7
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cho HyungMin¹^ORCID,Jeong HyunJoon²^ORCID,Kim Yohan¹^ORCID,Choi JinYoung¹^ORCID,Kong Jeong-Taek³^ORCID,Kim SoYoung³^ORCID

Affiliation:

1. Department of Semiconductor and Display Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

2. Department of Electrical and Computer Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

3. Department of Semiconductor Systems Engineering, College of Information and Communication Engineering, Sungkyunkwan University, Suwon, South Korea

Funder

Korean Government [Ministry of Science and ICT (MSIT)]

Korean Government

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/4358746/10645796.pdf?arnumber=10645796

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