Nanowire TFET with different Source Compositions applied to Low-Dropout Voltage Regulator
Author:
Affiliation:
1. LSI/PSI/USP, University of Sao Paulo,Sao Paulo,Brazil
Funder
CNPq
CAPES
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9880925/9880936/09881035.pdf?arnumber=9881035
Reference21 articles.
1. Full On-Chip CMOS Low-Dropout Voltage Regulator
2. Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs
3. Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
4. Tunnel field-effect transistor without gate-drain overlap
5. Investigation on the Effects of Gate-Source Overlap/Underlap and Source Doping Gradient of n-Type Si Cylindrical Gate-All-Around Tunnel Field-Effect Transistors
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Analysis of Low-Dropout Voltage Regulator designed with Gate-All-Around nanosheet transistors;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28
2. Hybrid low-dropout voltage regulator designed with TFET-MOSFET nanowire technologies;Semiconductor Science and Technology;2023-08-18
3. Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis;Solid-State Electronics;2023-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3