Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis-Reference-Cited by-同舟云学术

Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

Published:2023-04 Issue: Volume:202 Page:108611
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

de Lima Silva Wenita,do Nascimento Tolêdo Rodrigo,Gonçalez Filho Walter,de Moraes Nogueira Alexandro,Ghedini Der Agopian Paula,Antonio Martino Joao

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

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1. Design and Analysis of Novel Heterodielectric Double Metal(DM)-Triple Gate-Tunnel Field-Effect Transistors(FET): A Path to Ultra-Low Power Implementations;Transactions on Electrical and Electronic Materials;2024-06-03