1. Nanoscale CMOS: innovative materials, modeling and characterization;Balestra,2010
2. Beyond CMOS nanodevices (tomes 1 et 2);Balestra,2014
3. Double-gate silicon-on-insulator transistor with volume inversion: a new device with greatly enhanced performance;Balestra;IEEE Electron Device Lett,1987
4. Ultimate device scaling: intrinsic performance comparisons of carbon-based, InGaAs, and Si field-effect transistors for 5 nm gate length;Luisier,2011
5. Performance evaluation and design considerations of 2D semiconductor based FETs for sub-10 nm VLSI;Cao,2014