Analysis of Low-Dropout Voltage Regulator designed with Gate-All-Around nanosheet transistors-Reference-Cited by-同舟云学术

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Analysis of Low-Dropout Voltage Regulator designed with Gate-All-Around nanosheet transistors

Published:2023-08-28 Issue: Volume: Page:
ISSN:
Container-title:2023 37th Symposium on Microelectronics Technology and Devices (SBMicro)
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Author:

de Barros Souto Rayana Carvalho¹,Martino Joao Antonio¹,Agopian Paula Ghedini Der¹

Affiliation:

1. University of Sao Paulo,LSI/PSI/USP,Sao Paulo,Brazil

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10302454/10302463/10302596.pdf?arnumber=10302596

Reference12 articles.

1. Nanowire TFET with different Source Compositions applied to Low-Dropout Voltage Regulator

2. Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C

3. Analysis and design of monolithic, high PSR, linear regulators for SoC applications

4. Gate-All-Around Nanowire FETs vs. Triple-Gate FinFETs: On Gate Integrity and Device Characteristics;veloso;2016 ECS Trans 72 85 Imec Kapeldreef 75,2016

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