Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C-Reference-Cited by-同舟云学术

Design of operational transconductance amplifier with Gate-All-Around Nanosheet MOSFET using experimental data from room temperature to 200 °C

Published:2022-03 Issue: Volume:189 Page:108238
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Sousa Júlia C.S.,Perina Welder F.,Rangel Roberto,Simoen Eddy,Veloso Anabela,Martino Joao A.,Agopian Paula G.D.

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

National Council for Scientific and Technological Development

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

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3. Moore, S. K. Samsung’s 3-nm Tech Shows Nanosheet Transistor Advantage, IEEE Spectrum, https://spectrum.ieee.org/nanoclast/semiconductors/memory/samsungs-3nm-tech-shows-nanosheet-transistor-advantage; 2021 [accessed Jul 1, 2021].

4. Cutress, I. IBM Creates First 2nm Chip. Anandtech, https://www.anandtech.com/show/16656/ibm-creates-first-2nm-chip; 2021 [accessed: Jul 8 2021].

5. Taiwan Semiconductor Manufacturing Company, 3nm technonlogy, https://www.tsmc.com/english/dedicatedFoundry/technology/logic/l_3nm; 2021 [accessed Jun. 26, 2021].

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