Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes-Reference-Cited by-同舟云学术

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Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Grasser T.,Waltl M.,Wimmer Y.,Goes W.,Kosik R.,Rzepa G.,Reisinger H.,Pobegen G.,El-Sayed A.,Shluger A.,Kaczer B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409739.pdf?arnumber=7409739

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