First demonstration of high-Ge-content strained-Si<inf>1−x</inf>Ge<inf>x</inf> (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications-Reference-Cited by-同舟云学术

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First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Hashemi Pouya,Balakrishnan Karthik,Engelmann Sebastian U.,Ott John A.,Khakifirooz Ali,Baraskar Ashish,Hopstaken Marinus,Newbury Joseph S.,Chan Kevin K.,Leobandung Effendi,Mo Renee T.,Dae-Gyu Park

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047061.pdf?arnumber=7047061

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Demonstration of HfO₂-Based Gate Dielectric With ~0.8-nm Equivalent Oxide Thickness on Si_0.8Ge_0.2 by Trimethylaluminum Pre-Treatment and Al Scavenger;IEEE Journal of the Electron Devices Society;2023

2. A Novel FinFET Device with a Four-Period Vertically Stacked SiGe/Si Fin;2022 7th International Conference on Integrated Circuits and Microsystems (ICICM);2022-10-28

3. Beyond-Silicon Computing: Nano-Technologies, Nano-Design, and Nano-Systems;Emerging Computing: From Devices to Systems;2022-07-09

4. Highly Stacked GeSn Nanosheets by CVD Epitaxy and Highly Selective Isotropic Dry Etching;IEEE Transactions on Electron Devices;2022-04

5. Variability analysis of a graded-channel dual-material double-gate strained-silicon MOSFET with fixed charges;Journal of Computational Electronics;2022-01-15

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