Novel Radiation Hardened DSOT-MRAM Read Peripheral Circuit With Reduced Sensitive Nodes
Author:
Affiliation:
1. Department of Electronics and Communication Engineering, Indian Institute of Technology Roorkee, Roorkee, India
Funder
Science and Engineering Research Board (SERB), Department of Science and Technology, Government of India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/10299398/10148052.pdf?arnumber=10148052
Reference17 articles.
1. Compact Modeling of Differential Spin-Orbit Torque based MRAM
2. Quadruple Cross-Coupled Dual-Interlocked-Storage-Cells-Based Multiple-Node-Upset-Tolerant Latch Designs
3. Novel Radiation Hardened SOT-MRAM Read Circuit for Multi-Node Upset Tolerance
4. Soft-Error-Aware Read-Stability-Enhanced Low-Power 12T SRAM With Multi-Node Upset Recoverability for Aerospace Applications
5. LDAVPM: A Latch Design and Algorithm-based Verification Protected against Multiple-Node-Upsets in Harsh Radiation Environments
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1. Spin device-based image edge detection architecture for neuromorphic computing;Nanotechnology;2023-11-15
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