Soft-Error-Aware Read-Stability-Enhanced Low-Power 12T SRAM With Multi-Node Upset Recoverability for Aerospace Applications
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong
Funder
Hong Kong Research Grants Council Areas of Excellence
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8919/9745276/09737282.pdf?arnumber=9737282
Reference20 articles.
1. Improving Error Correction Codes for Multiple-Cell Upsets in Space Applications
2. Quadruple Cross-Coupled Latch-Based 10T and 12T SRAM Bit-Cell Designs for Highly Reliable Terrestrial Applications
3. Novel Low-Power and Highly Reliable Radiation Hardened Memory Cell for 65 nm CMOS Technology
4. A Soft Error Tolerant 10T SRAM Bit-Cell With Differential Read Capability
5. We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation Tolerance
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