A Low-Energy Critical Charge-Enhanced SRAM for Aerospace Applications
Author:
Affiliation:
1. Anhui University,School of Integrated Circuits,Hefei,China,230601
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10661305/10661306/10661345.pdf?arnumber=10661345
Reference15 articles.
1. Low power and write-enhancement RHBD 12T SRAM cell for aerospace applications
2. Novel Low-Power and Highly Reliable Radiation Hardened Memory Cell for 65 nm CMOS Technology
3. Novel Double-Node-Upset-Tolerant Memory Cell Designs Through Radiation-Hardening-by-Design and Layout
4. A Soft Error Tolerant 10T SRAM Bit-Cell With Differential Read Capability
5. We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation Tolerance
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