Abstract
Abstract
Artificial intelligence and deep learning today are utilized for several applications namely image processing, smart surveillance, edge computing, and so on. The hardware implementation of such applications has been a matter of concern due to huge area and energy requirements. The concept of computing in-memory and the use of non-volatile memory (NVM) devices have paved a path for resource-efficient hardware implementation. We propose a dual-level spin–orbit torque magnetic random-access memory (SOT-DLC MRAM) based crossbar array design for image edge detection. The presented in-memory edge detection algorithm framework provides spin-based crossbar designs that can intrinsically perform image edge detection in an energy-efficient manner. The simulation results are scaled down in energy consumption for data transfer by a factor of 8x for grayscale images with a comparatively smaller crossbar than an equivalent CMOS design. DLC SOT-MRAM outperforms CMOS-based hardware implementation in several key aspects, offering 1.53x greater area efficiency, 14.24x lower leakage power dissipation, and 3.63x improved energy efficiency. Additionally, when compared to conventional spin transfer torque (STT-MRAM and SOT-MRAM, SOT-DLC MRAM achieves higher energy efficiency with a 1.07x and 1.03x advantage, respectively. Further, we extended the image edge extraction framework to spiking domain where ant colony optimization (ACO) algorithm is implemented. The mathematical analysis is presented for mapping of conductance matrix of the crossbar during edge detection with an improved area and energy efficiency at hardware implementation. The pixel accuracy of edge-detected image from ACO is 4.9% and 3.72% higher than conventional Sobel and Canny based edge-detection.
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering
Reference22 articles.
1. Tutorial on memristor-based computing for smart edge applications;Gebregiorgis;Memories-Mater., Devices, Circ. Syst.,2023
2. Gd-doped HfO2 memristor device, evaluation robustness by image noise cancellation and edge detection filter for neuromorphic computing;Chakrabartty;IEEE Access,2019
3. Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications;Zahoor;Nanoscale Res. Lett.,2020
4. Exploring a SOT-MRAM based in-memory computing for data processing;He;IEEE Trans. Multi-scale Comp. Syst.,2018
5. SOT and STT based four-bit parallel MRAM cell for high-density applications;Dhull;IEEE Trans. Nanotech.,2021
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献