How the Analysis of Archival Data Could Provide Helpful Information About TID Degradation. Case Study: Bipolar Transistors-Reference-Cited by-同舟云学术

How the Analysis of Archival Data Could Provide Helpful Information About TID Degradation. Case Study: Bipolar Transistors

Published:2022-07 Issue:7 Volume:69 Page:1691-1699
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Martin-Holgado Pedro¹^ORCID,Romero-Maestre Amor¹^ORCID,de-Martin-Hernandez Jose²^ORCID,Gonzalez-Lujan Jose J.³,Illera-Gomez Ivan¹,Jimenez-de-Luna Yolanda⁴,Morilla Fernando⁵^ORCID,Barbero Mario Sacristan⁶^ORCID,Alia Ruben Garcia⁶^ORCID,Dominguez Manuel³,Morilla Yolanda¹^ORCID

Affiliation:

1. Centro Nacional de Aceleradores, Universidad de Sevilla, Consejo Superior de Investigaciones Científicas (CSIC), Junta de Andalucía (JA), Seville, Spain

2. Facultad de Matemáticas, Universidad de Sevilla, Seville, Spain

3. Alter Technology, Seville, Spain

4. Escuela Técnica Superior de Ingeniería (ETSI), Universidad de Sevilla, Seville, Spain

5. Department of Computer Science and Automatic Control, National Distance Education University, Madrid, Spain

6. European Organization for Nuclear Research (CERN), Geneva, Switzerland

Funder

Junta de Andalucia and Fondo Europeo de Desarrollo Regional (FEDER) Funds through the Singular Project Predicción del Comportamiento Eléctrico de Dispositivos Electrónicos bajo Radiación

Spanish Ministry of Science and Innovation under Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9830888/09805472.pdf?arnumber=9805472

Reference27 articles.

1. Hardness Assurance Statistical Methodology for Semiconductor Devices

2. Total-dose issues for microelectronics in space systems

3. Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs

4. Sample-to-Sample Variability of Floating Gate Errors Due to Total Ionizing Dose

5. A Bayesian Approach for Total Ionizing Dose Hardness Assurance

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