Influence of a Coupling Diode on the Indirect Characterization of the Serial NPN Power Transistor in a Linear Voltage Regulator Exposed to Ionizing Radiation

Abstract

The LM2990-integrated circuit family was among the first low-dropout voltage regulators to use a coupling diode to reduce a quiescent current. In certain conditions, the coupling diode, connected between the output terminal and the driver transistor collector contact, activates to supply the serial power transistor base current from the load. Nonetheless, an indirect characterization of the serial NPN transistor was affected, making it difficult to estimate its forward emitted current gain and a base current as a function of the absorbed total ionizing dose. The original SPICE simulation model had some limitations with generating the faithful simulation of radiation effects in samples supplied with a non-ideal voltage source. Therefore, a novel four-step computer simulation method was developed to specify bias and load conditions when the coupling diode reaction would not negatively affect the characterization of the serial power transistor. The previously reported method for estimating the serial transistor base current could be successfully used for dropout voltages that slightly exceed three equivalent diode voltage drops (that is, 2.4[Formula: see text]V) at the base-emitter junctions of the output amplifier transistors.