Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects
Author:
Affiliation:
1. Electronics and Communication Engineering Department, National Institute of Technology, Hamirpur, HP, India
2. Electronics and Communication Engineering Department, Indian Institute of Technology Roorkee, Roorkee, UK, India
Funder
Science and Engineering Research Board
Department of Science and Technology
Government of India, New Delhi
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Materials Chemistry,Electrical and Electronic Engineering,Computer Science Applications,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/8782713/9680797/09944876.pdf?arnumber=9944876
Reference27 articles.
1. Fabrication of carbon nanotube/copper and carbon nanofiber/copper composites for microelectronics
2. One hundred fold increase in current carrying capacity in a carbon nanotube–copper composite
3. Proposal and Analysis of Mixed CNT Bundle for Sub-Threshold Interconnects
4. Vertically aligned CNT-Cu nano-composite material for stacked through-silicon-via interconnects
5. Carbon nanotube-copper exhibiting metal-like thermal conductivity and silicon-like thermal expansion for efficient cooling of electronics
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