Design of SOI CMOS operational amplifiers for applications up to 300°C-Reference-Cited by-同舟云学术

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Design of SOI CMOS operational amplifiers for applications up to 300°C

Published:1996 Issue:2 Volume:31 Page:179-186
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Eggermont J.-P.,De Ceuster D.,Flandre D.,Gentinne B.,Jespers P.G.A.,Colinge J.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx1/4/10579/00487994.pdf?arnumber=487994

Cited by 55 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of High Temperature Up to 175 °C on the DC and RF Performances of 22-nm FD-SOI MOSFETs;IEEE Transactions on Electron Devices;2023-10

2. The High Temperatures’ Effects on the Conventional (Rectangular) and Non-conventional Layout Styles of the First and Second Generations for MOSFETs;Differentiated Layout Styles for MOSFETs;2023

3. Customized Imperialist Competitive Algorithm Methodology to Optimize Robust Miller CMOS OTAs;Electronics;2022-11-27

4. A Novel Study on a 300°C, High Performance LDO Regulator Using Silicon-On-Insulator Process for Extreme Drill Bit Application;2022 19th International SoC Design Conference (ISOCC);2022-10-19

5. 22 nm FD-SOI MOSFET Figures of Merit at high temperatures upto 175 °C;2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2022-01-16

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