Author:
Ebli Michael,Wattenberg Martin,Pfost Martin
Cited by
7 articles.
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1. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
2. Experiment Result of High Frequency Switching SiC Mosfet Gate Driver;2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE);2022-10-18
3. Experimental study of an EMI reduction gate-driver technique for turn-off transition of 1.7 kV SiC MOSFET;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06
4. A Cascaded Gate Driver Architecture to Increase the Switching Speed of Power Devices in Series Connection;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-04
5. Fundamentals;Highly Integrated Gate Drivers for Si and GaN Power Transistors;2021