A gate driver approach enabling switching loss reduction for hard-switching applications

Author:

Ebli Michael,Wattenberg Martin,Pfost Martin

Publisher

IEEE

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fast Switching of GaN Transistors using a Boosted Gate Voltage;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

2. Experiment Result of High Frequency Switching SiC Mosfet Gate Driver;2022 14th International Conference on Information Technology and Electrical Engineering (ICITEE);2022-10-18

3. Experimental study of an EMI reduction gate-driver technique for turn-off transition of 1.7 kV SiC MOSFET;2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe);2021-09-06

4. A Cascaded Gate Driver Architecture to Increase the Switching Speed of Power Devices in Series Connection;IEEE Journal of Emerging and Selected Topics in Power Electronics;2021-04

5. Fundamentals;Highly Integrated Gate Drivers for Si and GaN Power Transistors;2021

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