Experiment Result of High Frequency Switching SiC Mosfet Gate Driver
Author:
Affiliation:
1. Universitas Gadjah Mada,DTETI FT,Yogyakarta,Indonesia
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9954039/9954040/09954115.pdf?arnumber=9954115
Reference13 articles.
1. Gate driver design considerations for silicon carbide MOSFETs including series connected devices
2. Active Gate Driving Technique for a 1200 V SiC MOSFET to Minimize Detrimental Effects of Parasitic Inductance in the Converter Layout
3. A gate driver approach enabling switching loss reduction for hard-switching applications
4. The Loss Characteristics of PSFB ZVS DC-DC Converter Applied to the Auxiliary Power System
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