Experimental study of an EMI reduction gate-driver technique for turn-off transition of 1.7 kV SiC MOSFET-Reference-Cited by-同舟云学术

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Experimental study of an EMI reduction gate-driver technique for turn-off transition of 1.7 kV SiC MOSFET

Published:2021-09-06 Issue: Volume: Page:
ISSN:
Container-title:2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
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Author:

Geramirad Hadiseh¹,Morel Florent¹,Lefebvre Bruno¹,Vollaire Christian¹,Breard Arnaud²

Affiliation:

1. SAS SuperGrid Institute,ITE,Villeurbanne,France

2. Ecole Centrale de Lyon,Ampère lab., CNRS,Ecully,France,5005

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9570185/9570186/09570458.pdf?arnumber=9570458

Reference15 articles.

1. A Novel Zero-Voltage-Switching PWM Full Bridge Converter

2. Theoretical and experimental analysis of the soft switching process for SiC MOSFETs based Dual Active Bridge converters

3. MOSFET failure modes in the zero-voltage-switched full-bridge switching mode power supply applications

4. IGBT gate-drive with PCB Rogowski coil for improved short circuit detection and current turn-off capability

5. Design of a PCB Rogowski Coil based on the PEEC Method;guillod;2012 7th International Conference on Integrated Power Electronics Systems (CIPS),2012

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A comprehensive analytical description of the asymmetric active snubber;IET Power Electronics;2022-08-18

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