A comprehensive analytical description of the asymmetric active snubber
Author:
Affiliation:
1. Automotive Power Module Development Infineon Technologies AG Warstein Germany
2. Chair of Energy Conversion TU Dortmund University Dortmund Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/pel2.12367
Reference28 articles.
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3. Senzaki J. Hayashi S. Yonezawa Y. Okumura H.:Challenges to realize highly reliable SiC power devices: from the current status and issues of SiC wafers. In:2018 IEEE International Reliability Physics Symposium (IRPS) pp. 3B.3‐1‐3B.3‐6.IEEE Piscataway NJ(2018)
4. Jakobi W. Uhlemann A. Thoben M. Schweikert C. Strenger C. Pai A.P. et al.:Benefits of new CoolSiCTM MOSFET in hybridPACKTM drive package for electrical drive train applications. In:10th International Conference on Integrated Power Electronics Systems CIPS 2018pp. 1–9.IEEE Piscataway NJ(2018)
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