Modeling and Benchmarking 5nm Ferroelectric FinFET from Room Temperature down to Cryogenic Temperatures-Reference-Cited by-同舟云学术

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Modeling and Benchmarking 5nm Ferroelectric FinFET from Room Temperature down to Cryogenic Temperatures

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
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Author:

Parihar Shivendra Singh¹,Chatterjee Swetaki¹,Pahwa Girish²,Chauhan Yogesh Singh³,Amrouch Hussam¹

Affiliation:

1. University of Stuttgart,Semiconductor Test and Reliability (STAR),Germany

2. University of California,Department of Electrical Engineering & Computer Sciences,Berkeley,USA

3. Indian Institute of Technology Kanpur,Department of Electrical Engineering,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231310.pdf?arnumber=10231310

Reference22 articles.

1. A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond

2. Characterizing Ferroelectric Properties of Hf0.5Zr0.5O2 From Deep-Cryogenic Temperature (4 K) to 400 K

3. Stabilization of ferroelectric phase of Hf0.58Zr0.42O2 on NbN at 4K;henry;Applied Physics Letters,2019

4. Comprehensive Variability Analysis in Dual-Port FeFET for Reliable Multi-Level-Cell Storage

5. Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs

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