A Buried High <i>k</i> Insulator for Suppressing the Surface Recombination for GaN-Based Micro-Light-Emitting Diodes-Reference-Cited by-同舟云学术

A Buried High k Insulator for Suppressing the Surface Recombination for GaN-Based Micro-Light-Emitting Diodes

Published:2022-06 Issue:6 Volume:69 Page:3213-3216
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Muyao¹^ORCID,Hang Sheng¹,Chu Chunshuang¹^ORCID,Shao Hua¹^ORCID,Zhang Yidan¹,Zhang Yonghui¹^ORCID,Zhang Yandi²,Zheng Quan³,Li Qing³,Zhang Zi-Hui¹^ORCID

Affiliation:

1. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, School of Electronics and Information Engineering, and the Key Laboratory of Electronic Materials and Devices of Tianjin, Hebei University of Technology, Tianjin, Beichen, China

2. Tianjin Institute of Aerospace Mechanical and Electrical Equipment, Tianjin, China

3. State Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang, China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology

Joint Research Project for Tunghsu Group and Hebei University of Technology

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09758113.pdf?arnumber=9758113

Reference22 articles.

1. InGaN/GaN light-emitting diode with a polarization tunnel junction

2. A dielectric-constant-controlled tunnel junction for III-nitride light-emitting diodes

3. Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer

4. Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer: errata

5. Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

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