Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes-Reference-Cited by-同舟云学术

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Impact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodes

Published:2019-05-01 Issue:12 Volume:27 Page:A643
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kou Jianquan,Shen Chih-Chiang,Shao Hua,Che Jiamang,Hou Xu,Chu Chunshuang,Tian Kangkai,Zhang Yonghui^ORCID,Zhang Zi-Hui^ORCID,Kuo Hao-Chung

Funder

Natural Science Foundation of Hebei Province

Natural Science Foundation of Tianjin City

Program for 100-Talent-Plan of Hebei Province

Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province

Suzhou Institute of Nanotechnology, Chinese Academy of Sciences

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems

2. Sustained high external quantum efficiency in ultrasmall blue III–nitride micro-LEDs

3. Transfer-printed micro-LED and polymer-based transceiver for visible light communications

4. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology

5. Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays

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4. Numerical analysis of the influence of sidewall defects on AlGaN-based deep ultraviolet micro-light emitting diodes;Current Applied Physics;2024-11

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