Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process

Author:

Hsu Yun-ChengORCID,Hsu Yu-Hsuan,Lin Chien-Chung,Wu Ming Hsien,Kuo Hao Chung,Wuu Dong-Sing,Hsiao Ching-Lien,Horng Ray-HuaORCID

Funder

National Science and Technology Council

Publisher

Elsevier BV

Reference23 articles.

1. Development of microLED;Lin;Appl. Phys. Lett.,2020

2. The micro-LED roadmap: status quo and prospects;Lin;J. Phys.: Photonics,2023

3. Improving the leakage characteristics and efficiency of GaN-based micro-light-emitting diode with optimized passivation;Lee;ECS J. Solid State Sci. Technol.,2020

4. UV photon-induced defects and its control in plasma etching process;Ishikawa;J. Appl. Phys.,2008

5. Surface reaction enhancement by UV irradiation during Si etching process with chlorine atom beam;Samukawa;Jpn. J. Appl. Phys.,2007

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