Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al x Ga1−x )2O3/Ga2O3 HFET: An Analytical Approach-Reference-Cited by-同舟云学术

Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach

Published:2022-07 Issue:7 Volume:69 Page:3876-3883
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Patnaik Akash¹^ORCID,Jaiswal Neeraj K.²^ORCID,Sharma Pankaj¹^ORCID

Affiliation:

1. Department of Electronics and Communication, Advanced Semiconductor Materials and Nanoelectronics Research Group, PDPM Indian Institute of Information Technology, Design and Manufacturing (IIITDM), Jabalpur, India

2. 2-D Materials Research Laboratory, Discipline of Physics, PDPM-Indian Institute of Information Technology, Design and Manufacturing, Jabalpur, Madhya Pradesh, India

Funder

DST Science and Engineering Research Board

IIITDM Jabalpur under Faculty Initiation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09793572.pdf?arnumber=9793572

Reference33 articles.

1. Design Space of Delta-Doped β-(Al x Ga1-x )2O3/Ga2O3 High-Electron Mobility Transistors

2. A closed-form expression to analyze electronic properties in delta-doped heterostructures

3. Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

4. Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels

5. Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy

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1. Simulation study on temperature characteristics of AlN/ β-Ga2O3 HEMT;Microelectronics Journal;2024-10

2. Forward Bias Gate Leakage Mechanism in δ-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ HFET;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

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4. Design considerations to enhance 2D-Electron gas density in δ-doped β-(AlxGa1-x)2O3/Ga2O3 HFET;Journal of Materials Science: Materials in Electronics;2023-09

5. Impact of Donor Ionization on 2DEG Charge Density in δ-Doped β-(AlxGa1-x)2O3/Ga2O3 HFET: An Analytical Study;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02