Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 heterostructure channels

Abstract

Abstract We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al x Ga1−x )2O3/β-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β-(Al x Ga1–x )2O3 barrier. The electron channel characteristics are studied using transfer length method, capacitance–voltage and Hall measurements. A Hall sheet charge density of 1.06 × 1013 cm−2 and a mobility of 111 cm2 V−1 s−1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm−1 and an on–off ratio of 8 × 106. A sheet resistance of 5.3 kΩ/square is measured at room temperature, which includes contribution from a parallel channel in β-(Al x Ga1–x )2O3.