Forward Bias Gate Leakage Mechanism in δ-doped β-(AlxGa1-x)2O3/Ga2O3 HFET-Reference-Cited by-同舟云学术

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Forward Bias Gate Leakage Mechanism in δ-doped β-(Al_xGa_1-x)₂O₃/Ga₂O₃ HFET

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 33rd International Conference on Microelectronics (MIEL)
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Author:

Patnaik A.¹,Gupta M.²,Sharma P.¹

Affiliation:

1. PDPM Indian Institute of Information Technology, Design and Manufacturing (IIITDM),Advanced Semiconductor Materials and Nanoelectronics Research Group,Department of Electronics and Communication,Jabalpur,India,482005

2. University Grants Commission,Consortium for Scientific Research,Department of Atomic Energy,Indore,India,452017

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315896.pdf?arnumber=10315896

Reference14 articles.

1. β-(Al_xGa_1−x)₂O₃/Ga₂O₃ heterostructure Schottky diodes for improved V_BR²/R_ON

2. Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

3. Schottky barrier diode based on ?-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics;qiming;Applied Physics Letters,2017

4. Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET

5. Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach

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