Impact of Donor Ionization on 2DEG Charge Density in δ-Doped β-(AlxGa1-x)2O3/Ga2O3 HFET: An Analytical Study-Reference-Cited by-同舟云学术

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Impact of Donor Ionization on 2DEG Charge Density in δ-Doped β-(AlxGa1-x)2O3/Ga2O3 HFET: An Analytical Study

Published:2023-07-02 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 23rd International Conference on Nanotechnology (NANO)
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Author:

Patnaik Akash¹,Jaiswal Neeraj K.²,Sharma Pankaj¹

Affiliation:

1. PDPM Indian Institute of Information Technology, Design and Manufacturing (IIITDM),Advanced Semiconductor Materials and Nanoelectronics Research Group,Department of Electronics and Communication,Jabalpur,India,482005

2. PDPM Indian Institute of Information Technology, Design and Manufacturing (lIITDM),Department of Natural Science,Jabalpur,India,482005

Funder

DST Science & Engineering Research Board (SERB)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10231127/10231154/10231243.pdf?arnumber=10231243

Reference15 articles.

1. Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET

2. Role of Device Parameters in Optimizing 2DEG Charge Density in β-(Al_xGa_1−x)₂O₃/Ga₂O₃ HFET: An Analytical Approach

3. Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

4. Analytical model for 2DEG charge density in β-(Al x Ga1−x )2O3/Ga2O3 HFET

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