28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application-Reference-Cited by-同舟云学术

28 nm HKMG-Based Current Limited FeFET Crossbar-Array for Inference Application

Published:2022-12 Issue:12 Volume:69 Page:7194-7198
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

De Sourav¹^ORCID,Muller Franz¹^ORCID,Thunder Sunanda¹^ORCID,Abdulazhanov Sukhrob¹^ORCID,Laleni Nellie¹,Lederer Maximilian¹^ORCID,Ali Tarek²,Raffel Yannick¹^ORCID,Dunkel Stefan²,Mojumder Shaown¹,Vardar Alptekin¹,Beyer Sven²,Seidel Konrad¹,Kampfe Thomas¹^ORCID

Affiliation:

1. Center Nanoelectronic Technologies, Fraunhofer IPMS, Dresden, Germany

2. Integration Engineering, GlobalFoundries, Dresden, Germany

Funder

European Union’s Electronic Components and Systems for European Leadership (ECSEL) Joint Undertaking

Project TEMPO and ANDANTE

German Bundesministerium für Wirtschaft

State of Saxony in the frame of the “Important Project of Common European Interest (IPCEI).”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09940199.pdf?arnumber=9940199

Reference29 articles.

1. READ-Optimized 28nm HKMG Multibit FeFET Synapses for Inference-Engine Applications

2. Ultra-low power robust 3bit/cell Hf0.5Zr0.5O2 ferroelectric finFET with high endurance for advanced computing-in-memory technology;de;Proc Symp VLSI Technol,2021

3. Robust Binary Neural Network Operation From 233 K to 398 K via Gate Stack and Bias Optimization of Ferroelectric FinFET Synapses

4. Low-power vertically stacked one time programmable multi-bit IGZO-based BEOL compatible ferroelectric TFT memory devices with lifelong retention for monolithic 3D-inference engine applications;de;Proc EAI Eur Solid-State Devices Circuits Conf,2022

5. Ferroelectric FET analog synapse for acceleration of deep neural network training

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses;ACS Applied Materials & Interfaces;2024-09-12

2. Variation-Resilient FeFET-Based In-Memory Computing Leveraging Probabilistic Deep Learning;IEEE Transactions on Electron Devices;2024-05

3. Trade-off Between Thermal Budget and Thickness Scaling: A Bottleneck on Quest for BEOL Compatible Ultra-Thin Ferroelectric Films Sub-5nm;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Ferroelectric Field Effect Transistors–Based Content‐Addressable Storage‐Class Memory: A Study on the Impact of Device Variation and High‐Temperature Compatibility;Advanced Intelligent Systems;2024-01-08

5. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories;Microelectronics Journal;2024-01