Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories-Reference-Cited by-同舟云学术

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Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

Published:2024-01 Issue: Volume:143 Page:106030
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Wang Zhe,Liu Yan,Zhou Jiuren,Han Genquan

Funder

National Key Research and Development Program of China

Foundation for Innovative Research Groups of the National Natural Science Foundation of China

Natural Science Foundation of Zhejiang Province

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Content-addressable memory (CAM) circuits and architectures: a tutorial and survey;Pagiamtzis;IEEE J. Solid State Circ.,2006

2. Content-addressable and associative memory systems a survey;Hanlon;IEEE Trans. Electron. Comput.,1966

3. Emerging trends in design and applications of memory-based computing and content-addressable memories;Karam;Proc. IEEE,2015

4. The trend of emerging non-volatile TCAM for parallel search and AI applications;Zhou;Chip,2022

5. A 0.7-fJ/bit/search 2.2-ns search time hybrid-type TCAM architecture;Choi;IEEE J. Solid State Circ.,2005

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