Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options-Reference-Cited by-同舟云学术

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Analysis of Self-Heating Effects in Multi-Nanosheet FET Considering Bottom Isolation and Package Options

Published:2022-03 Issue:3 Volume:69 Page:1524-1531
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yoo Changhyun¹^ORCID,Chang Jeesoo²^ORCID,Seon Yoongeun³,Kim Hyunwoo¹,Jeon Jongwook¹^ORCID

Affiliation:

1. Department of Electrical and Electronic Engineering, Konkuk University, Seoul, South Korea

2. Data and Information Technology (DIT) Center, Samsung Electronics, Hwasung-si, South Korea

3. Design Enablement Team, Samsung Electronics, Hwasung-si, South Korea

Funder

Konkuk University, in 2017

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9722602/09690586.pdf?arnumber=9690586

Reference27 articles.

1. Self-heating effects and hot carrier degradation in In0.53Ga0.47As gate-all-around MOSFETs

2. Optimized Substrate for Improved Performance of Stacked Nanosheet Field-Effect Transistor

3. Punch-Through-Stopper Free Nanosheet FETs With Crescent Inner-Spacer and Isolated Source/Drain

4. Device and Circuit Exploration of Multi-Nanosheet Transistor for Sub-3 nm Technology Node

5. Thermal SPICE Modeling of FinFET and BEOL Considering Frequency-Dependent Transient Response, 3-D Heat Flow, Boundary/Alloy Scattering, and Interfacial Thermal Resistance

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1. Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors;Results in Physics;2024-09

2. Radiation effects on multi-channel Forksheet-FET and Nanosheet-FET considering the bottom dielectric isolation scheme;Nuclear Engineering and Technology;2024-07

3. A Comparative Review: Performance Parameters of Fin, Nanowire and Nanosheet Field Effect Transistors on 5nm Node;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23

4. Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFET;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

5. Electrothermal Modeling of Multi-Nanosheet FETs With Various Layouts;IEEE Transactions on Electron Devices;2024-04

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