A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability-Reference-Cited by-同舟云学术

A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

Published:2022-07 Issue:7 Volume:69 Page:4042-4045
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Long¹^ORCID,Ma Jie¹,Luo Min²,Cui Wangming²,Liu Peigang²,Liu Siyang²^ORCID,Wei Jiaxing²,Li Sheng²^ORCID,Sun Weifeng²^ORCID,He Nailong³,Zhang Sen³,Bai Song⁴

Affiliation:

1. National ASIC System Engineering Research Center, School of Microelectronics, Southeast University, Nanjing, China

2. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China

3. CSMC TechnologiesCompany, Wuxi, China

4. State Key Laboratory of Wide Bandgap Semiconductor Power Electronic Devices, Nanjing Electronic Device Institute, Nanjing, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Distinguished Young Scholars Program of Southeast University

Foundation of State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9802454/09783057.pdf?arnumber=9783057

Reference20 articles.

1. Low On-state Voltage and Latch-up Immunity Thin SOI LIGBT with Multi-Segmented Trench Gates

2. A Novel Double-RESURF SOI-LIGBT With Improved $V_{\mathrm{\scriptscriptstyle ON}}-{E}_{ \mathrm{\scriptscriptstyle OFF}}$ Tradeoff and Low Saturation Current

3. A Novel No Miller Plateau SOI-LIGBT With Low Saturation Current and Improved Switching Performance

4. Simulation Study of a Novel Snapback Free Reverse-Conducting SOI-LIGBT With Embedded P-Type Schottky Barrier Diode

5. 500-V Silicon-On-Insulator Lateral IGBT With W-Shaped n-Typed Buffer and Composite p-Typed Collectors

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2. Repetitive ESD-Induced Electrical Degradation and Optimization for High-Voltage SOI-LIGBT as Output Device;IEEE Transactions on Electron Devices;2023-09

3. Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures;2023 24th International Vacuum Electronics Conference (IVEC);2023-04-25

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