Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures
Author:
Affiliation:
1. Chongqing University,State Key Laboratory of Power Transmission Equipment and System Security and New Technology,Chongqing,China
2. Aalborg University,Department of Energy Technology,Aalborg,Denmark
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10156868/10156872/10157563.pdf?arnumber=10157563
Reference19 articles.
1. Optimization on Thermomechanical Behavior for Improving the Reliability of Press Pack IGBT Using Response Surface Method
2. Overview of monitoring methods of press-pack insulated gate bipolar transistor modules under different package failure modes;liu;IET Power Electronics Early Access,2022
3. A New Press Pack IGBT for High Reliable Applications With Short Circuit Failure Mode
4. Modeling and Analysis on Overall Fatigue Failure Evolution of Press-Pack IGBT Device
5. A Phase Change Material Integrated Press Pack Power Module With Enhanced Overcurrent Capability for Grid Support—A Study on FRD
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improving Short-Circuit Withstand Capability by Targeted Optimization Package for Press-Pack IGBT Module;IEEE Transactions on Power Electronics;2024-10
2. An Improved Evaluation Method for the Short-Circuit Withstand Capability of Press-Pack IGBT Modules;IEEE Transactions on Electron Devices;2024-01
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