An Improved Evaluation Method for the Short-Circuit Withstand Capability of Press-Pack IGBT Modules-Reference-Cited by-同舟云学术

An Improved Evaluation Method for the Short-Circuit Withstand Capability of Press-Pack IGBT Modules

Published:2024-01 Issue:1 Volume:71 Page:702-708
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Liu Renkuan¹^ORCID,Li Hui²^ORCID,Yao Ran²^ORCID,Chen Siyu²,Luo Xiaorong³^ORCID,Lai Wei²^ORCID,Chen Xianping²^ORCID,Tan Hongtao²,Zhou Bailing²^ORCID

Affiliation:

1. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing, China

2. State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering, Chongqing University, Chongqing, China

3. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China State Grid Corporation Joint Fund for Smart Grid

Graduate Research and Innovation Foundation of Chongqing, China

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10382412/10316240.pdf?arnumber=10316240

Reference17 articles.

1. Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs

2. Research on the Multiphysics Field-Circuit Coupling Model of Press Pack IGBT Considering the Application of Hybrid HVDC Breakers

3. Investigation on the Short-circuit Withstand Capability of Press-pack IGBT modules with Optimized Package Structures

4. Robustness Evaluation of High-Voltage Press-Pack IGBT Modules in Enhanced Short-Circuit Test

5. Experimental Investigations on Current Sharing Characteristics of Parallel Chips Inside Press-Pack IGBT Devices