Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area-Reference-Cited by-同舟云学术

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Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area

Published:2023-03 Issue:3 Volume:70 Page:1194-1198
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Ma Jie¹,Pan Chengwu¹,Gu Yong¹,Zhang Long¹^ORCID,Zheng Guiqiang¹,Fu Hao¹,Liu Siyang²^ORCID,Sun Weifeng²^ORCID,Chang Changyuan¹,Zhang Sen³

Affiliation:

1. National ASIC System Engineering Research Center, School of Microelectronics, Southeast University, Nanjing, China

2. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing, China

3. CSMC Technologies Company, Wuxi, China

Funder

National Natural Science Foundation of China

Distinguished Young Scholars Program of Southeast University

Technological Achievements of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10024144.pdf?arnumber=10024144

Reference18 articles.

1. A Silicon-On-Insulator Lateral IGBT With Segmented Trenches for Improving Short-Circuit Withstanding Capability

2. A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance

3. High voltage thick SOI-LIGBT with high current density and latch-up immunity

4. Novel double MOS-resistors SOI-LIGBT with low forward voltage and high short-circuit capability

5. Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches

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