High voltage thick SOI-LIGBT with high current density and latch-up immunity-Reference-Cited by-同舟云学术

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High voltage thick SOI-LIGBT with high current density and latch-up immunity

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Zhu Jing,Sun Weifeng,Zhang Long,Du Yicheng,Yu Hui,Huang Keqin,Gu Yan,Zhang Sen,Su Wei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123416.pdf?arnumber=7123416

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects;IEEE Transactions on Electron Devices;2024-01

3. Improvement in U-Shaped Channel SOI Lateral IGBT for Wider Reverse Bias Safe Operating Area;IEEE Transactions on Electron Devices;2023-03

4. A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses;Semiconductor Science and Technology;2023-02-15

5. Simulation Study of Novel Trench Gate U-Shaped Channel SOI Lateral IGBTs With Suppressed Gate Voltage Overshoot and Reduced di/dt;IEEE Transactions on Electron Devices;2021-08

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