An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors-Reference-Cited by-同舟云学术

An Artificial Neural Network Implemented Using Parallel Dual-Gate Thin-Film Transistors

Published:2022-10 Issue:10 Volume:69 Page:5574-5579
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hu Yushen¹^ORCID,Lei Tengteng¹^ORCID,Wang Yuqi¹^ORCID,Wang Fei¹^ORCID,Wong Man²^ORCID

Affiliation:

1. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China

2. Department of Electronic and Computer Engineering and the Shenzhen Research Institute, The Hong Kong University of Science and Technology (HKUST), Hong Kong, China

Funder

Innovation and Technology Fund

Science and Technology Program of Shenzhen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09877914.pdf?arnumber=9877914

Reference15 articles.

1. Neuromorphic Implementation of Logic Functions Based on Parallel Dual-Gate Thin-Film Transistors

2. P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor

3. The Influence of the Activation Function in a Convolution Neural Network Model of Facial Expression Recognition

4. Backpropagation and the brain

5. On Early Stopping in Gradient Descent Learning

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