P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor-Reference-Cited by-同舟云学术

P‐1.1: Characterization of the Off‐State Current of an Elevated‐Metal Metal‐Oxide Thin‐Film Transistor

Published:2021-02 Issue:S1 Volume:52 Page:413-416
ISSN:0097-966X
Container-title:SID Symposium Digest of Technical Papers
language:en
Short-container-title:SID Symposium Digest of Technical Papers

Author:

Wang Yuqi¹²,Xia Zhihe¹²,Wong Man¹²

Affiliation:

1. Department of Electronic and Computer Engineering Hong Kong

2. State Key Laboratory on Advanced Displays and Optoelectronics and Technologies The Hong Kong University of Science and Technology Hong Kong

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/sdtp.14505

Reference4 articles.

1. High-performance and reliable elevated-metal metal-oxide thin-film transistor for high-resolution displays[C];Lu L;2017 IEEE International Electron Devices Meeting (IEDM). IEEE,2017

2. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide[J];Kato K;2012 Japanese Journal of Applied Physics

3. Self-Aligned Elevated-Metal Metal-Oxide Thin-Film Transistors for Displays and Flexible Electronics[C];Xia Z;2019 IEEE International Electron Devices Meeting (IEDM). IEEE,2019

4. The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors[J];Xia Z;SID International Symposium: Digest of Technology Papers,2018

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