An Ion‐Mediated Spiking Chemical Neuron based on Mott Memristor

Author:

Ren Huihui12,Li Fanfan12,Wang Min2,Liu Guolei2,Li Dingwei2,Wang Rui2,Chen Yitong12,Tang Yingjie2,Wang Yan2,Jin Ran12,Huang Qi3,Xing Lixiang3,Chen Xiaopeng4,Wang Juan5,Guo Chengchen2,Zhu Bowen23ORCID

Affiliation:

1. School of Materials and Engineering Zhejiang University Hangzhou 310027 China

2. Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province School of Engineering Westlake University Hangzhou 310024 China

3. Westlake Institute for Optoelectronics Hangzhou 311421 China

4. Enovated3D (Hangzhou) Technology Development Co. Ltd. Hangzhou 310051 China

5. College of Environmental & Resource Sciences Zhejiang University Hangzhou 310058 China

Abstract

AbstractArtificial spiking neurons capable of interpreting ionic information into electrical spikes are critical to mimic biological signaling systems. Mott memristors are attractive for constructing artificial spiking neurons due to their simple structure, low energy consumption, and rich neural dynamics. However, challenges remain in achieving ion‐mediated spiking and biohybrid‐interfacing in Mott neurons. Here, a biomimetic spiking chemical neuron (SCN) utilizing an NbOx Mott memristor and oxide field‐effect transistor‐type chemical sensor is introduced. The SCN exhibits both excitation and inhibition spiking behaviors toward ionic concentrations akin to biological neural systems. It demonstrates spiking responses across physiological and pathological Na+ concentrations (1–200 × 10−3 m). The Na+‐mediated SCN enables both frequency encoding and time‐to‐first‐spike coding schemes, illustrating the rich neural dynamics of Mott neuron. In addition, the SCN interfaced with L929 cells facilitates real‐time modulation of ion‐mediated spiking under both normal and salty cellular microenvironments.

Funder

National Natural Science Foundation of China

Publisher

Wiley

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