50‐4: Invited Paper: Low‐Temperature Metal‐Oxide Thin‐Film Transistor Technology and the Realization of Electronic Systems on Flexible Substrates

Author:

Shi Runxiao1,Hu Yushen1,Xie Xinying1,Wong Man1

Affiliation:

1. The Hong Kong University of Science and Technology Kowloon, Hong Kong China

Abstract

A low‐temperature technology for fabricating thin‐film transistors (TFTs) is essential for the realization of electronic systems on flexible substrates. Presently reviewed are improved techniques for forming the source/drain regions and reducing the population of channel defects in a metal‐oxide TFT. These have been applied to the construction of different TFT structures, including ones with bottom gate, top gate, and dual gates. The utility of the improved 300‐°C technology has been demonstrated by the realization of a variety of electronic systems, such as a gate‐driver on array for active‐matrix displays, an analog front‐end for acquiring biopotential signals, and an artificial neural network for neuromorphic computing.

Publisher

Wiley

Reference11 articles.

1. Low-temperature Elevated-Metal Metal-Oxide Thin-Film Transistors and Circuit Building Blocks on a Flexible Substrate;Shi R;J Soc Inf Disp,2021

2. P-15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors

3. A Metal-Oxide Thin-Film Transistor Technology With Donor-Species Drive-In Pretreatment;Shi R;IEEE Trans Electron Devices,2023

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