Affiliation:
1. The Hong Kong University of Science and Technology Kowloon, Hong Kong China
Abstract
A low‐temperature technology for fabricating thin‐film transistors (TFTs) is essential for the realization of electronic systems on flexible substrates. Presently reviewed are improved techniques for forming the source/drain regions and reducing the population of channel defects in a metal‐oxide TFT. These have been applied to the construction of different TFT structures, including ones with bottom gate, top gate, and dual gates. The utility of the improved 300‐°C technology has been demonstrated by the realization of a variety of electronic systems, such as a gate‐driver on array for active‐matrix displays, an analog front‐end for acquiring biopotential signals, and an artificial neural network for neuromorphic computing.
Reference11 articles.
1. Low-temperature Elevated-Metal Metal-Oxide Thin-Film Transistors and Circuit Building Blocks on a Flexible Substrate;Shi R;J Soc Inf Disp,2021
2. P-15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors
3. A Metal-Oxide Thin-Film Transistor Technology With Donor-Species Drive-In Pretreatment;Shi R;IEEE Trans Electron Devices,2023