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P-15: The Use of Fluorination to Enhance the Performance and the Reliability of Elevated-Metal Metal-Oxide Thin-Film Transistors

  • Published:2018-05 Issue:1 Volume:49 Page:1235-1238
  • ISSN:0097-966X
  • Container-title:SID Symposium Digest of Technical Papers
  • language:en
  • Short-container-title:

Author:

Xia Zhihe12,Lu Lei123,Li Jiapeng12,Kwok Hoi-Sing123,Wong Man12

Affiliation:

1. Department of Electronic and Computer Engineering; Hong Kong

2. State Key Laboratory on Advanced Displays and Optoelectronics and Technologies; Hong Kong

3. Jockey Club Institute for Advanced Study The Hong Kong University of Science and Technology; Hong Kong

Funder

Partner State Key Laboratory on Advanced Displays and Optoelectronics Technologies

Publisher

Wiley

Reference15 articles.

1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices;Park;Thin Solid Films,2012

2. Review paper: Transparent amorphous oxide semiconductor thin film transistor;Kwon;Electron. Mater. Lett.,2011

3. Present status of amorphous In−Ga−Zn−O thin-film transistors;Kamiya;Sci. Technol. Adv. Mater.,2010

4. Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics;Lu;IEEE Electron Device Lett.,2016

5. Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide;Xia;IEEE Electron Device Lett.,2017
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