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Zirconium-aluminum co-doping on solution-processed indium oxide thin film and deceives measured by a novel nondestructive method

  • Published:2021-12 Issue: Volume:27 Page:101459
  • ISSN:2468-0230
  • Container-title:Surfaces and Interfaces
  • language:en
  • Short-container-title:Surfaces and Interfaces

Author:

Yao DengmingORCID,Xiong Xin,Fu Xiao,Xu Zhuohui,Ning HonglongORCID,Luo DongxiangORCID,Tang Huansong,Zheng Hua,Yao Rihui,Peng Junbiao

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,General Physics and Astronomy,Condensed Matter Physics,Surfaces and Interfaces,General Chemistry

Reference40 articles.

1. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications;Steudel;J. Soc. Inf. Disp.,2017

2. Touch sensor array with integrated drivers and comparator using a-IGZO TFTs;Di;IEEE Electron Device Lett.,2017

3. Metal oxide thin thin film transistors and their application to novel display technology;Cao;J. South China Univ. Technol.,2012

4. Correction: all-solution-processed, flexible thin-thin film transistor based on PANI/PETA as gate/gate insulator;Hong,2019

5. K. Jun-Ki Fabrication of eco-friendly solution-processed indium zinc oxide thin-film transistors through recycling based on photocatalytic reactions of TiO2. SID Symp. Dig. Tech. Pap. 2018,1,1264-7.

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