High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In<sub>2</sub>O<sub>3</sub> channel layers-Reference-Cited by-同舟云学术

High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In₂O₃ channel layers

Published:2022 Issue:24 Volume:12 Page:14986-14997
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Xu Xiaofen¹,He Gang¹^ORCID,Jiang Shanshan²,Wang Leini¹,Wang Wenhao¹,Liu Yanmei¹,Gao Qian¹

Affiliation:

1. School of Materials Science and Engineering, Anhui University, Hefei 230601, China

2. School of Integration Circuits, Anhui University, Hefei 230601, China

Abstract

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA01051H

Reference68 articles.

1. Graphene quantum dots: emergent nanolights for bioimaging, sensors, catalysis and photovoltaic devices

2. Colloidal Graphene Quantum Dots

3. Hydrothermal Route for Cutting Graphene Sheets into Blue-Luminescent Graphene Quantum Dots

4. A Facile Microwave Avenue to Electrochemiluminescent Two-Color Graphene Quantum Dots

5. Mass Production of Graphene Quantum Dots by One-Pot Synthesis Directly from Graphite in High Yield

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